Universal memory element with systems employing same and...

Details Universal memory element with systems employing same and... Universal memory element with systems employing same and...

G - Physics

11

C

G11C 11/00 (2006.01) G11C 11/56 (2006.01) G11C 16/02 (2006.01)

Patent

CA 2332867

A universal memory element (302) having multi-level, non-detectable states and method and apparatus for programming the same, and methods and applications embodying the same in neural networks (320), artificial intelligence and data storage systems. The universal memory element is programmed by applying one or more sub-interval pulses insufficient to switch the memory element from said high resistance state to said low resistance state, but sufficient to modify the memory material such that accumulation of additional energy pulses causes the memory element to switch from said high resistance state to said low resistance state.

L'invention concerne un élément de mémoire universelle (302) ayant des états multiniveaux non détectables ainsi que des procédés et un appareil de programmation de l'élément, et des procédés et applications le mettant en application dans des réseaux neuronaux (320), des systèmes d'intelligence artificielle et de stockage de données. L'élément de mémoire universelle est programmé par application d'une ou de plusieurs impulsions d'énergie par sous-intervalle insuffisantes pour commuter l'élément de mémoire dudit état de résistance élevée audit état de résistance faible, mais suffisantes pour modifier la matière de la mémoire de sorte que l'accumulation d'impulsions d'énergie additionnelle provoque la commutation de l'élément de mémoire dudit état de résistance élevée audit état de résistance faible.

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