Unmatched field effect transistors providing matched...

H - Electricity – 03 – G

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328/200, 328/202

H03G 3/30 (2006.01) H03G 1/00 (2006.01) H03H 11/24 (2006.01) H04B 1/10 (2006.01)

Patent

CA 1069593

UNMATCHED FIELD EFFECT TRANSISTORS PROVIDING MATCHED VOLTAGE-CONTROLLED RESISTANCES by Stevan D. Bradley ABSTRACT OF DISCLOSURE Matched voltage-controlled resistances are provided across the drain-to-source junctions of a pair of FET's, each FET having a gate electrode connected through an associated control resistor to the same one terminal of a source of DC control voltage; having a source electrode electrically connected to the same other terminal of the voltage source; and having an associated feedback resistor electrically connected between its drain and gate electrodes. The drain electrodes are preferably capacitively coupled to input or output terminals to prevent DC loading of the FET network by external circuitry. A resistor is also connected across the drain-to-source junction of each FET to limit the maximum value of net resistance presented thereby. The resistance of one of the control resistors is adjusted to have a value which causes the net drain-to-source resistance of the associated FET to have the same value as that of the other FET for a particular value of control voltage. The net drain-to-source resistances of the two FET's are then closely matched over a range of control voltages. - 1 -

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