H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149
H01L 29/267 (2006.01) H01L 21/28 (2006.01) H01L 21/314 (2006.01) H01L 21/336 (2006.01) H01L 29/43 (2006.01)
Patent
CA 1308818
UNPINNED OXIDE-COMPOUND SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME ABSTRACT OF THE DISCLOSURE Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO2. A metal gate is deposited on the SiO2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO2 directly overlying the GaAs layer. Y0988-028
597294
Batey John
Tiwari Sandip
Wright Steven L.
International Business Machines Corporation
Rosen Arnold
LandOfFree
Unpinned oxide-compound semiconductor structures and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Unpinned oxide-compound semiconductor structures and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Unpinned oxide-compound semiconductor structures and method... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1229286