Unstrained defect-free epitaxial mismatched heterostructures...

Details Unstrained defect-free epitaxial mismatched heterostructures... Unstrained defect-free epitaxial mismatched heterostructures...

C - Chemistry, Metallurgy

30

B

148/2.4, 148/3.8

C30B 29/10 (2006.01) C30B 25/02 (2006.01) H01L 21/20 (2006.01) H01L 21/203 (2006.01)

Patent

CA 1330194

ABSTRACT OF THE DISCLOSURE Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant of the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.

600745

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