Use of adherent layer for filling contact holes for...

Details Use of adherent layer for filling contact holes for... Use of adherent layer for filling contact holes for...

H - Electricity

01

L

356/151

H01L 21/465 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1282189

Abstract of the Disclosure In a method of filling a contact hole of a semiconductor device, a layer of conducting material, such as a metal silicide, is formed on side walls of the contact hole, and metal is selectively deposited on the bottom of the contact hole and on the layer of metal silicide on the side walls of the contact hole to substantially fill the contact hole. The method provides a contact structure comprising a contact region of the semiconductor device defining the bottom of the contact hole, a layer of conducting material, such as a metal silicide, on the side walls of the contact hole, and a metal plug substantially filling the contact hole. The metal plug adheres to the layer of metal silicide on the side walls of the contact hole and to the contact region defining the bottom of the contact hole.

569516

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