G - Physics – 03 – C
Patent
G - Physics
03
C
96/269
G03C 5/18 (2006.01) G03F 7/022 (2006.01) G03F 7/26 (2006.01) G03F 7/36 (2006.01)
Patent
CA 1132832
Plasma Development of Resists Abstract Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decar- boxylation of the exposed areas followed by blanket exposure. FI9-79-063
371001
Kaplan Leon H.
Zimmerman Steven M.
International Business Machines Corporation
Na
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