Use of nitric oxide to clean a semiconductor

Details Use of nitric oxide to clean a semiconductor Use of nitric oxide to clean a semiconductor

H - Electricity

01

L

356/178

H01L 21/30 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1093217

USE OF NITRIC OXIDE TO CLEAN A SEMICONDUCTOR Abstract of the Disclosure A procedure for cleaning a semiconductor material of impurities which reside on the surface of the material is disclosed. The procedure is indicated for use prior to one or more thermal processing steps for the material, and involves the exposure of the material to a cleaning gas comprised of nitric oxide and, in a presently preferred form, of anhydrous hydrochloric acid as well.

302453

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