Vapor-phase epitaxial growth method

Details Vapor-phase epitaxial growth method Vapor-phase epitaxial growth method

C - Chemistry, Metallurgy

30

B

148/24, 148/3.8

C30B 25/02 (2006.01) C30B 29/40 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2008946

A vapor-phase epitaxial growth method for producing a Groups III-V compound semiconductor containing arsenic by vapor-phase epitaxial growth using arsenic trihydride as an arsenic source is disclosed, wherein said arsenic trihydride has a volatile impurity concentration of not more than 1.5 molppb on a germanium tetrahydride conversion. The resulting epitaxial crystal has a low residual carrier concentration and is applicable to a field effect transistor.

Divulgation d'une méthode de croissance épitaxiale en phase gazeuse pour produire un composé semiconducteur des groupes III-IV contenant de l'arsenic. De l'arsine est utilisé comme source d'arsenic. La concentration des impuretés volatiles de l'arsine est inférieure à 1,5 ppb (mole), convertie en tétrahydrure de germanium. Le cristal épitaxique ainsi obtenu renferme une faible concentration résiduelle de porteur et peut être utilisé dans un transistor à effet de champ.

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