Vapor phase epitaxial growth method by organometallic...

Details Vapor phase epitaxial growth method by organometallic... Vapor phase epitaxial growth method by organometallic...

H - Electricity

01

L

148/2.4

H01L 21/365 (2006.01) C30B 25/02 (2006.01)

Patent

CA 1242623

ABSTRACT OF THE DISCLOSURE A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180 - 320°C by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.

475659

Affiliated with

Also associated with

Rating

Vapor phase epitaxial growth method by organometallic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vapor phase epitaxial growth method by organometallic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor phase epitaxial growth method by organometallic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1186636