Vapor phase epitaxial growth method by organometallic...

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H01L 21/365 (2006.01) C30B 25/02 (2006.01)

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CA 1242623

ABSTRACT OF THE DISCLOSURE A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180 - 320°C by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.

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