H - Electricity – 01 – L
Patent
H - Electricity
01
L
148/2.4
H01L 21/365 (2006.01) C30B 25/02 (2006.01)
Patent
CA 1242623
ABSTRACT OF THE DISCLOSURE A zinc selenide or zinc selenide-sulphide epitaxial crystal is grown at a growth temperature of about 180 - 320°C by organometallic chemical vapor deposition by using zinc alkyl and hydrogen selenide and/or hydrogen sulphide. An as-grown crystal presented an n conductivity type low resistivity and exhibited a narrow near-band gap emission peak. Besides a crystal of the same material as the epitaxial layer, crystals of group III-V, group IV, and so forth having the same or similar crystal structure as the epitaxial layer can be used as an underlayer for the growth.
475659
Fujita Shigeo
Matsuda Yoshinobu
Sasaki Akio
Fetherstonhaugh & Co.
Sumitomo Chemical Co. Ltd.
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