Vapor-phase growth apparatus

H - Electricity – 01 – L

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Details

H01L 21/205 (2006.01) C30B 25/10 (2006.01) C30B 25/12 (2006.01)

Patent

CA 2486662

A vapor-phase growth apparatus includes: at least a reaction furnace which is hermetically closable, a wafer container which is disposed in the reaction furnace, for disposing a wafer at a predetermined position, a gas supply member for supplying a source gas toward the wafer, and a heating member for heating the wafer, wherein the apparatus is designed to form a grown film on a front surface of the wafer by supplying the source gas in a high temperature state while the heating member heats the wafer in the reaction furnace through the wafer container. The wafer container is made of a single material or a single member, and has a ratio R2/R1, which is not less than 0.4 to not more than 1.0, where R1 is a heat resistance for a heat transfer route from a rear surface of the wafer container toward the front surface of the wafer, and R2 is a heat resistance for a heat transfer route from the rear surface of the wafer container toward a front surface of the wafer container.

La présente invention a trait à un dispositif d'épitaxie en phase vapeur, comportant au moins un réacteur obturable, une portion de stockage de plaquettes disposée dans le réacteur pour le placement d'une plaquette en une position déterminée, un moyen d'alimentation en gaz pour fournir du gaz brut à la plaquette, et un moyen de chauffage pour réchauffer de la plaquette, dans lequel un film épitaxial est formé à la surface de la plaquette par l'alimentation en gaz brut dans le réacteur à l'état chauffé pendant le chauffage de la plaquette dans le réacteur par le moyen de chauffage à travers la portion de stockage de plaquettes et, lorsque la portion de stockage de plaquettes est constituée d'un matériau unique ou d'un organe unique, le rapport R2/R1 de la résistance R2 du trajet de transfert thermique s'étendant depuis la surface arrière de la portion de stockage de plaquettes vers la surface avant de la portion de stockage de plaquettes à la résistance thermique R1 du trajet de transfert thermique s'étendant de la surface arrière de la portion de stockage de plaquettes à la surface avant de la plaquette est compris entre 0,4 et 1,0.

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