Vapor phase growth process using organo-group v compounds

Details Vapor phase growth process using organo-group v compounds Vapor phase growth process using organo-group v compounds

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 23/02 (2006.01) C30B 25/02 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2000559

- 15 - VAPOR PHASE GROWTH PROCESS USING ORGANO-GROUP V COMPOUNDS Abstract A vapor phase growth process is disclosed for the fabrication of III- V devices which utilizes organo-Group V compounds as a source material. In particular, organoarsenic and/or organophosphorus compounds are used and provide epitaxial layers of morphology similar to those grown with conventional hydride sources. Preferred organo-Group V compounds are liquids at room temperature and are considerably less toxic than their hydride (gaseous) counterparts. The organo-Group V sources may be used not only as a source during epitaxial growth, but as a wafer ambient which is used to prevent surface decomposition both before and after epitaxial growth.

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