Vapour effusion source for epitaxial deposition plants

Details Vapour effusion source for epitaxial deposition plants Vapour effusion source for epitaxial deposition plants

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 25/14 (2006.01) C30B 23/02 (2006.01) C30B 23/06 (2006.01) H01L 21/203 (2006.01) H01L 21/363 (2006.01)

Patent

CA 2039913

ABSTRACT An effusion source, for use in epitaxial deposition plants in which molecular vapour beams are directed towards a substrate to be grown in an ultrahigh vacuum environment, has a first tube, which is closed in an airtight manner at one end by flanges permitting passage of vapour inlet tubes and which is provided at its other end with baffle plates and a nozzle for mixing vapours and shaping the molecular beam. A second tube, surrounding and coaxially connected to the first tube at its other end, provides a chamber at ambient pressure and temperature around a vapour mixing and molecular beam shaping zone within the first tube. A heating device can be located within the chamber.

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