Vapour phase chemical infiltration process for densifying...

C - Chemistry – Metallurgy – 23 – C

Patent

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Details

C23C 16/44 (2006.01) C23C 16/04 (2006.01) C23C 16/455 (2006.01) C23C 16/458 (2006.01)

Patent

CA 2218317

A chemical vapor infiltration method for densifying porous substrates disposed in annular stacks. The substrates to be densified (12) are loaded inside a reaction chamber (11) of an infiltration oven, being disposed in at least one annular stack (30) defining an interior passage (31) with spaces (33) being formed between the substrates. The gas admitted into the reaction chamber is channelled on leaving a preheating zone (18) towards one of the two volumes constituted by the inside and the outside of the, or each, stack of substrates, and preferably towards the smaller volume. This volume (31) is closed at its opposite end so that the gas flows from admission into the chamber to its exhaust from the chamber from the inside to the outside of the, or each, stack, or vice versa, with the gas passing through the spaces between the substrates and diffusing into them.

Les substrats à densifier (12) sont chargés à l'intérieur d'une chambre de réaction (11) d'un four d'infiltration, en étant disposés en au moins une pile annulaire (30) qui délimite un passage intérieur (31) avec des espaces (33) ménagés entre des substrats. La phase gazeuse admise dans la chambre de réaction est canalisée, en sortie d'une zone de préchauffage (18), vers l'un des deux volumes constitués par l'intérieur et l'extérieur de la ou des piles de substrats, de préférence le plus petit. Ce volume (31) est fermé à son extrémité opposée de sorte que la circulation de la phase gazeuse entre l'admission dans la chambre et l'évacuation hors de la chambre se fait de l'intérieur vers l'extérieur de la ou chaque pile, ou inversement, la phase gazeuse passant à travers les espaces entre substrats et diffusant au sein de ceux-ci.

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