Varactor diode having a stepped capacitance-voltage profile

H - Electricity – 01 – L

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H01L 29/93 (2006.01)

Patent

CA 2173365

A varactor diode having a stepped capacitance-voltage profile, formed in heterostructural integrated circuit technology. Several layers in the diode structure have pulse doping to confine conduction in the diode to a sheet of charge that provides the stepped capacitance-voltage profile. The structural design of the diode may be modified to attain desired capacitance-voltage characteristics.

Diode varicap possédant un profil capacité/tension en échelon, formée selon une technologie de circuit intégré à hétérostructure. Plusieurs couches de la structure de diode possèdent un dopage à impulsions permettant de confiner la conduction dans la diode vers une couche de charge fournissant le profil capacité/tension en échelon. On peut modifier la conception structurelle de la diode afin d'obtenir les caractéristiques souhaitées de capacité/tension.

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