Varistor material and process for production therefor

Details Varistor material and process for production therefor Varistor material and process for production therefor

H - Electricity

01

B

25/139, 31/182

H01B 1/08 (2006.01) H01C 7/112 (2006.01)

Patent

CA 1332107

ABSTRACT OF THE DISCLOSURE A varistor material comprising two crystalline phases of ZnO and ZnMn2O4, wherein Zn and Mn are present at such a ratio that 3 to 7% by mol of ZnO is contained per 100% by mol of ZnO + MnO and the nonlinear index (a) of the varistor properties is at least 10; and a process for the production of the same, which comprises adding a manganese compound to ZnO at such a ratio as to give a content of MnO, sintering the mixture at 1100 to 1350°C, and further annealing the obtained sintered material at a temperature lower than the sintering temperature by at least 50°C and higher than 1000°C; are disclosed.

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