Vertical ballistic transistor with isolated base contact

Details Vertical ballistic transistor with isolated base contact Vertical ballistic transistor with isolated base contact

H - Electricity

01

L

356/119

H01L 29/72 (2006.01) H01L 29/06 (2006.01) H01L 29/423 (2006.01) H01L 29/76 (2006.01)

Patent

CA 1271266

THETA DEVICE WITH IMPROVED BASE CONTACT ABSTRACT OF THE DISCLOSURE A vertical ballistic transistor is described. Base metallic contacts of reliable thickness are deposited on a carrier depletable layer and diffuse into the base. A depletion region forms in the depletable layer. The depletion region electrically isolates the base contact from the emitter. The thickness of the depletable layer prevents the generation of usual depletion regions in the base that tend to cut off base current.

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