Vertical cavity surface emitting laser including indium in...

Details Vertical cavity surface emitting laser including indium in... Vertical cavity surface emitting laser including indium in...

H - Electricity

01

S

H01S 5/343 (2006.01) H01S 5/183 (2006.01) H01S 5/323 (2006.01)

Patent

CA 2470858

Quantum wells and associated barrier layers can be grown to include nitrogen (N), aluminum (AI), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well (11) comprised of InGaAs; GaAsN barrier layers (12) sandwiching said at least one quantum well (11); and GaAsN confinement layers (13) sandwiching said barrier layers (12). GaAsN barrier layers (12) sandwiching the quantum well (11) and AIGaAs confinement layers (13) sandwiching the barrier layers (12) can also be provided with a InGaAs quantum well (11). AIGaAs barrier layers (12) sandwiching the at least one quantum well (11) and GaAsN confinement layers (13) sandwiching the barrier layers (12) can also be provided with a InGaAs quantum well (11). Quantum wells (11) can be developed up to and including 50 .ANG. in thickness. Quantum wells (11) can also be developed with a depth of at least 40 meV.

L'invention concerne des puits quantiques et des couches barrières associées que l'on peut faire croître de façon à comporter de l'azote (N), de l'aluminium (Al), de l'antimoine (Sb), du phosphore (P) et/ou de l'indium (In) placés à l'intérieur ou autour d'un substrat GaAs type pour obtenir une performance de VCSEL à longueur d'onde longue, par exemple dans la gamme située entre 1260 et 1650 nm. L'invention se caractérise en ce que le laser à cavité verticale et émission par la surface comporte au moins un puits quantique (11) comprenant InGaAs; des couches barrières GaAsN (12) prenant en sandwich lesdits puits quantiques (11); et des couches de confinement GaAsN (13) prenant en sandwich les couches barrières (12). Les couches barrières (12) GaAsN prenant en sandwich le puits quantique (11) et les couches de confinement (13) AlGaAs prenant en sandwich les couches barrières (12) peuvent également être pourvues d'un puits quantique InGaAs (11). Les couches barrières AlGaAs (12) prenant en sandwich les puits quantiques (11) et les couches de confinement (13) GaAsN prenant en sandwich les couches barrières (12) peuvent également être pourvues d'un puits quantique (11) InGaAs. Les puits quantiques (11) peuvent être élaborés jusqu'à et y compris une épaisseur de 50 .ANG.. Ils peuvent également être élaborés avec une profondeur d'au moins 40 meV.

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