Vertical field effect transistor with improved gate and...

Details Vertical field effect transistor with improved gate and... Vertical field effect transistor with improved gate and...

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H01L 21/36 (2006.01) H01L 21/461 (2006.01) H01L 29/10 (2006.01) H01L 29/76 (2006.01) H01L 29/808 (2006.01) H01L 29/812 (2006.01)

Patent

CA 1148272

RD-11215 VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED GATE AND CHANNEL STRUCTURE Abstract of the Disclosure A high frequency field effect transistor of gallium arsenide or other III-V semiconductor compounds has a preferentially etched trapezoidal groove structure in the top surface which creates parallel trapezoidal semiconductor fingers that are wider at the top then at the bottom. Schottky gates or junction gates are fabricated within the grooves surrounding the elongated fingers. The vertical conducting channels between the gates are narrow leading to a high blocking gain, and more contact area is available at the top of the device.

356031

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