Vertical geometry ingan led

Details Vertical geometry ingan led Vertical geometry ingan led

H - Electricity

01

L

H01L 33/32 (2010.01)

Patent

CA 2344391

A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.

On décrit une diode électroluminescente à géométrie verticale qui est capable d'émettre de la lumière dans les parties rouge, verte, bleue, violette et ultraviolette du spectre électromagnétique. La diode électroluminescente comprend un substrat conducteur au carbure de silicium, un puits quantique InGaN, une couche tampon conductrice située entre le substrat et le puits quantique, une couche de nitrure de gallium non dopée située respectivement sur chaque surface du puits quantique, et des contacts ohmiques présents suivant une orientation à géométrie verticale.

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