Vertical igfet with internal gate and method of making same

Details Vertical igfet with internal gate and method of making same Vertical igfet with internal gate and method of making same

H - Electricity

01

L

356/149

H01L 29/78 (2006.01) H01L 21/336 (2006.01) H01L 29/423 (2006.01)

Patent

CA 1192669

VERTICAL IGFET WITH INTERNAL GATE AND METHOD FOR MAKING SAME Abstract A vertical IGFET device comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger-like portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The IGFET device is fabricated utilizing an epitaxial lateral overgrowth (ELO) technique for depositing a monocrystalline silicon layer over the insulated gate electrode which is disposed on a silicon substrate.

429823

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