Vertical junction field effect semiconductor diodes

Details Vertical junction field effect semiconductor diodes Vertical junction field effect semiconductor diodes

H - Electricity

01

L

H01L 29/861 (2006.01) H01L 21/308 (2006.01) H01L 21/329 (2006.01) H01L 21/337 (2006.01) H01L 21/8234 (2006.01) H01L 27/02 (2006.01)

Patent

CA 2428673

Semiconductor diodes (320) ae diode connected vertical cylindrical field effect devices having one diode terminal (314) as the common connection between a gate (312) and a source/drain (309) of the vertical cylindrical field effect devices. Methods of forming the diode connected vertical cylindrical field effect devices are disclosed.

L'invention concerne des diodes à semiconducteurs, qui se présentent sous la forme de dispositifs à effet de champ cylindriques à structure verticale montés en diode, dans lesquels une borne de diode tient lieu de connexion commune entre une grille et un circuit drain-source des dispositifs. L'invention concerne également des procédés relatifs à la réalisation de ces dispositifs.

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