H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/108 (2006.01) H01L 31/101 (2006.01)
Patent
CA 2396951
In order to detect an incident light, at least one element comprising a semiconductor material (6) and at least two electrodes (4) surrounding said element are formed on an insulating layer (2) that does not absorb said light. The element-electrode assembly is capable of absorbing said light and is dimensioned to augment luminous intensity in relation to the incident light by especially causing a surface plasmon mode to resonate between the interfaces of the assembly with the layer and the propagating medium of the incident light, the resonance of said mode taking place at the interface between the element and at least one of the electrodes, said mode being excited by the light magnetic field component parallel to the electrodes. The invention can be used in optical telecommunications.
Selon l'invention, pour détecter une lumière incidente, on forme, sur une couche isolante (2) n'absorbant pas cette lumière, au moins un élément comprenant un matériau semiconducteur (6) et au moins deux électrodes (4) encadrant l'élément, l'ensemble élément - électrodes étant apte à absorber cette lumière et dimensionné pour augmenter l'intensité lumineuse par rapport à la lumière incidente, en faisant résonner en particulier un mode de plasmon de surface entre les interfaces de l'ensemble avec la couche et le milieu de propagation de la lumière incidente, la résonance de ce mode ayant lieu à l'interface entre l'élément et au moins l'une des électrodes, ce mode étant excité par la composante du champ magnétique de la lumière, parallèle aux électrodes. Application aux télécommunications optiques.
Collin Stephane
Pardo Fabrice
Pelouard Jean-Luc
Teissier Roland
Centre National de La Recherche Scientifique
Goudreau Gage Dubuc
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