Vertical semiconductor laser with lateral electrode contact

Details Vertical semiconductor laser with lateral electrode contact Vertical semiconductor laser with lateral electrode contact

H - Electricity

01

S

345/32

H01S 5/183 (2006.01) H01S 5/042 (2006.01)

Patent

CA 2031541

A vertical laser is typically formed by successive horizontal layers, epitaxially grown on a substrate, suitable for forming a bottom mirror, a bottomcladding layer, an active region, a top cladding layer, and a top mirror. In prior art, one of a pair of electrodes for enabling electrical pumping the laser--the "top"electrode--is attached to the top surface of the top mirror, whereby undesirably large amounts of heat are generated because of the relatively high impedance of the top mirror. To reduce this heat generation, the laser is redesigned to enable the top electrode to make lateral contact with the top cladding layer, whereby the impedance and hence the power loss are reduced.

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