Very high speed integrated microelectronic tubes

Details Very high speed integrated microelectronic tubes Very high speed integrated microelectronic tubes

H - Electricity

01

J

313/1.4

H01J 21/10 (2006.01) H01J 1/304 (2006.01) H01J 17/48 (2006.01)

Patent

CA 1283946

ABSTRACT OF THE DISCLOSURE An array of microelectronic tubes is shown which includes a plate-like substrate upon which an array of sharp needle like cathode electrodes is located. Each tube in the srray includes an anode electrode spaced from the cathode electrode. The tubes each contain gas at a pressure of between about 1/100 and 1 atmosphere, and the spacingbetween the tip of the cathode electrodes and anode electrodes is equal to or less than about 0.5 µm. The tubes are operated at voltages such that the mean free path of electrons travelling in the gas between the cathode and anode electrodes is equal to or greater than the spacing between the tip of the cathode electrode and the associated anode electrode. Both diode and triode arrays are shown.

554213

Affiliated with

Also associated with

Rating

Very high speed integrated microelectronic tubes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Very high speed integrated microelectronic tubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Very high speed integrated microelectronic tubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1277788