Vicinal gallium nitride substrate for high quality homoepitaxy

Details Vicinal gallium nitride substrate for high quality homoepitaxy Vicinal gallium nitride substrate for high quality homoepitaxy

B - Operations, Transporting

32

B

B32B 9/00 (2006.01) C30B 29/38 (2006.01) C30B 29/40 (2006.01) H01L 21/46 (2006.01)

Patent

CA 2546106

A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the <0001> direction predominately toward the <1010> direction or the <1120> direction, at the offcut angle in a range that is from about 0.2 to about 10 degrees (FIGURE 9). The surface has a RMS roughness measured by 50 x 50 mircometers squared AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm-2. The substrate can be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication III-V nitride-based microelectronic and optoelectronic devices.

L'invention concerne un substrat au nitrure III-V, par exemple, GaN, comprenant une surface (0001) tronquée par rapport à la direction <0001> essentiellement vers la direction <1010> ou la direction <1120> à un angle de troncature dans une gamme allant d'environ 0,2 à environ 10·. La surface présente une rugosité RMS mesurée par un balayage AFM 50 x 50?m?2¿ inférieur à 1 nm, et une densité de dislocation inférieure à 3E6 cm?-2¿. Le substrat peut être formé par découpage en troncature d'une ébauche de lingot ou de plaquette, par rodage ou tirage en troncature du corps du substrat sur un substrat hétéroépitaxial vicinal correspondant, par exemple, un saphir découpé. Le substrat est employé utilement au dépôt homoépitaxial dans la fabrication de dispositifs microélectroniques et opto-électroniques à base de nitrure III-V.

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