Visible and infrared indium antimonide (insb) photodetector...

Details Visible and infrared indium antimonide (insb) photodetector... Visible and infrared indium antimonide (insb) photodetector...

H - Electricity

01

L

H01L 31/0296 (2006.01) H01L 21/3105 (2006.01) H01L 31/0216 (2006.01) H01L 31/0304 (2006.01) H01L 31/103 (2006.01)

Patent

CA 2070708

The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) sub- strate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are then formed thereon of a material which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The optical cutoff wavelength and thickness of the partially visible light blocking layer (28) are selected to suppress the avalanche effect in the device (10) at visible wavelengths. This enables the device (10) to operate effectively over a wide wavelength range including the visible and infrared bands. The passivation and/or partially visible light blocking layers (26, 28) may be a thin layer of a semiconductor such as germanium, or silicon dioxide and/or silicon nitride followed by a partially visible light blocking silicon layer.

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