H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/30 (2010.01) H01L 33/34 (2010.01)
Patent
CA 2371361
A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
L'invention concerne un dispositif émetteur de lumière visible, comprenant une couche à semi-conducteur à large bande interdite, dopée à l'aide d'au moins un élément émetteur de lumière selon diverses longueurs d'ondes, en fonction de transitions atomiques. De préférence, le semi-conducteur est GaN, InN, AlN, BN ou des alliages de ceux-ci, dopés à l'aide d'un élément du groupe des lanthanides, tel que Er, Pr ou Tm. Il est possible d'accroître l'émission lumineuse par recuit des semi-conducteurs à large bande interdite.
Birkhahn Ronald H.
Chao Liang-Chiun
Garter Michael J.
Steckl Andrew J.
Macrae & Co.
University Of Cincinnati
LandOfFree
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