Visible light surface emitting semiconductor laser

Details Visible light surface emitting semiconductor laser Visible light surface emitting semiconductor laser

H - Electricity

01

S

H01S 5/183 (2006.01) H01S 5/04 (2006.01) H01S 5/323 (2006.01) H01S 5/34 (2006.01) H01S 5/343 (2006.01) H01S 5/347 (2006.01) H01S 3/025 (1990.01)

Patent

CA 2123205

2123205 9309582 PCTABS00022 A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers (20, 40) surrounding one or more active, optically emitting quantum-well layers (30) having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2neff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and neff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror (10) and substrate (60) to one conductivity-type and heavily doping regions of the upper mirror (50) with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

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