Vmos/bipolar power switch

Details Vmos/bipolar power switch Vmos/bipolar power switch

G - Physics

05

F

323/9

G05F 1/40 (2006.01) H03K 17/0412 (2006.01) H03K 17/12 (2006.01) H03K 17/60 (2006.01) H03K 17/687 (2006.01)

Patent

CA 1158309

Abstract of the Disclosure A relatively high power switching device and circuit is provided via the combination discretely or on a common substrate of the VMOS field effect transistor and a bipolar power transistor. The VMOS transistor in- cludes a gate electrode for receiving a control signal, a drain electrode and a source electrode. The drain and source electrodes of the VMOS transistor are individually connected to the collector and base electrodes of the bi- polar power transistor, respectively, while the collector emitter current path of the power transistor is the main current carrying path of the switching device.

352288

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