Voltage limiting protection for high frequency power device

Details Voltage limiting protection for high frequency power device Voltage limiting protection for high frequency power device

H - Electricity

02

H

H02H 9/00 (2006.01) H01L 27/02 (2006.01) H03K 17/0812 (2006.01)

Patent

CA 2453562

An RF power device comprising a power transistor fabricated in a first semiconductor chip and a MOSCAP type structure fabricated in a second semiconductor chip. A voltage limiting device is provided for protecting the power transistor from input voltage spikes and is preferably fabricated in the semiconductor chip along with the MOSCAP. Alternatively, the voltage limiting device can be a discrete element fabricated on or adjacent to the capacitor semiconductor chip. By removing the voltage limiting device from the power transistor chip, fabrication and testing of the voltage limiting device is enhanced, and semiconductor area for the power device is increased and aids in flexibility of device fabrication.

L'invention concerne un dispositif de puissance hyperfréquence qui comprend un transistor fabriqué dans une première puce semi-conductrice et une structure de type MOSCAP fabriquée dans une deuxième puce semi-conductrice. Un dispositif de limitation de tension permet de protéger le transistor de puissance des pointes de tensions d'entrée, et est de préférence fabriqué dans la puce semi-conductrice avec le MOSCAP. En variante, le dispositif de limitation de tension peut être un élément discret fabriqué sur la puce semi-conductrice de type condensateur ou disposé de manière adjacente à celle-ci. Par retrait du dispositif de limitation de tension de la puce du transistor de puissance, la fabrication et les essais dudit dispositif de limitation de tension sont améliorés, et la superficie semi-conductrice du dispositif de puissance est augmentée et contribue à la flexibilité de la fabrication du dispositif.

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