H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/123
H01L 23/52 (2006.01) H01L 23/14 (2006.01) H01L 23/538 (2006.01) H01L 23/64 (2006.01)
Patent
CA 1232364
- 21 - WATER-SCAIE-INTEGRATED ASSEMBLY Abstract The standard silicon wafer of a conventional wafer-scale-integrated assembly is doped to render it highly conductive. Additionally, a conductive layer is formed on the bottom of the wafer. The bottom-side layer- forms an easily accessible ground plane of the assembly. Moreover, this layer and the conductive silicon constitute one plate of an advantageous wafer-size decoupling capacitor. A nearly continuous power layer and a relatively thick layer of silicon dioxide on the top side of the assembly form the other elements of the decoupling capacitor. Additionally, the nearly continuous power layer constitutes an effective a-c ground plane for overlying signal lines.
492631
Herrero Victor
Schaper Leonard W.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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