G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/13 (2006.01) G02B 6/132 (2006.01) G02B 6/12 (2006.01) G02B 6/30 (2006.01)
Patent
CA 2367044
A method for forming a high optical confinement waveguide structure comprising the steps of: forming a silicon-based waveguide on a substrate by depositing a waveguide layer of silicon containing material onto the substrate; wherein the material is selected in a manner such that the refractive index of the waveguide is greater than the refractive index of the substrate; wherein the forming of the silicon-based waveguide further comprises etching the deposited waveguide structure such as to form a ridge structure in the deposited waveguide layer; wherein the method further comprises the step of forming an optical signal processing element in and integrated with the deposited waveguide layer.
L'invention se rapporte à un procédé de formation d'une structure de guide d'ondes caractérisée par un confinement optique important. Ledit procédé consiste à former un guide d'ondes à base de silicium sur un substrat en déposant sur le substrat une couche à effet de guide d'ondes composée d'une matière contenant du silicium. Ladite matière est sélectionnée de manière que l'indice de réfraction du guide d'ondes soit supérieur à l'indice de réfraction du substrat. Le procédé en question consiste ensuite à graver la structure de guide d'ondes déposée de façon à former une structure rigide dans la couche guide d'ondes déposée, puis à former un élément de traitement du signal optique que l'on intègre à ladite couche guide d'ondes déposée.
Bazylenko Michael
Sceats Mark
Ogilvy Renault Llp/s.e.n.c.r.l.,s.r.l.
The University Of Sydney
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