H - Electricity – 01 – S
Patent
H - Electricity
01
S
H01S 5/0625 (2006.01) H01S 5/026 (2006.01) H01S 5/042 (2006.01) H01S 5/10 (2006.01) H01S 5/20 (2006.01) H01S 5/227 (2006.01) H01S 5/34 (2006.01) H01S 3/18 (1995.01)
Patent
CA 2153909
A wavelength-tunable semiconductor laser comprises an active region including an active layer generating an optical gain by injection of a current, a phase-control region including a tuning layer generating variation of a refraction index by injection of the current, and a distributed-Bragg-reflector region including a tuning layer generating variation of a refraction index by injection of the current. The active region, the phase-control region and the distributed-Bragg-reflector region are arranged in alignment in a resonance direction. A diffraction grating is provided in the vicinity of the tuning layer of the distributed-Bragg-reflector region. The wavelength-tunable semiconductor laser includes means for uniformly injecting a second current to the phase-control region and the distributed-Bragg-reflector region. An optical-confinement factor to the tuning layer of the phase-control region is greater than an optical-confinement factor to the tuning layer of the distributed-Bragg-reflector type.
Kitamura Mitsuhiro
Yamaguchi Masayuki
Corporation Nec
G. Ronald Bell & Associates
LandOfFree
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