Wideband if amplifier with complementary gaas fet- bipolar...

Details Wideband if amplifier with complementary gaas fet- bipolar... Wideband if amplifier with complementary gaas fet- bipolar...

H - Electricity

04

N

325/115, 325/123

H04N 5/44 (2006.01) H03F 3/193 (2006.01)

Patent

CA 1205901

Abstract of the Disclosure A wideband intermediate frequency (IF) amplifier including a GaAs FET input portion and a bipolar transistor output portion is disclosed. The high gain of the GaAs FET over higher frequencies is complemented by the high gain of the bipolar transistors at lower frequencies to provide high amplifier gain over a large bandwidth. The GaAs FET and bipolar portions are coupled by means of an equalizer circuit matching the two portions together only at the higher frequencies of the IF band to provide an inexpensive, high performance IF amplifier particularly adapted for use in a direct broadcast satellite receiver operating in the super high frequency (SHF) band.

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