H - Electricity – 03 – F
Patent
H - Electricity
03
F
H03F 3/19 (2006.01) H03F 3/193 (2006.01) H03F 3/26 (2006.01) H04N 7/10 (2006.01)
Patent
CA 2295341
The present invention incorporates GaAs field effect transistors (GaAsFETs) in a radio frequency (RF) ultra-linear amplifier. The described amplifier circuit is a transformer-coupled single input, signal processing unit incorporating ultra-fast, GaAsFETs in a three active device cascode. This arrangement allows for a higher working voltage to be applied across the three semiconductors rather than a traditional two transistor cascode. The operational bandwidth can process a mixed modulation signal comprised of analog and digital channels.
Menna Rudolph J.
Miguelez Philip
General Instrument Corporation
Kirby Eades Gale Baker
LandOfFree
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