Wideband optical coupling into thin soi cmos photonic...

G - Physics – 02 – B

Patent

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G02B 6/12 (2006.01)

Patent

CA 2636930

An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).

L'invention concerne un agencement pour introduire un couplage optique dans un guide d'onde en silicium relativement mince formé dans la couche SOI d'une structure SOI et l~en retirer, comprenant un élément lenticulaire et une surface de référence définie dans la structure SOI pour obtenir le couplage optique de manière efficace. L'entrée sur le guide d'onde peut provenir d'une fibre optique ou d'un dispositif à émission optique (laser). Un agencement de couplage similaire peut être utilisé entre un guide d'onde en silicium mince et une fibre de sortie (soit une fibre monomodale, soit une fibre multimodale).

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