Word line transistor strength control for read and write in...

Details Word line transistor strength control for read and write in... Word line transistor strength control for read and write in...

G - Physics

11

C

G11C 11/16 (2006.01)

Patent

CA 2677920

Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT- MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.

L'invention concerne des systèmes, circuits et procédés de commande de tension de ligne de mots au niveau d'un transistor de ligne de mots dans une mémoire vive magnétorésistive à couple de transfert de spin (STT-MRAM). Une première tension peut être fournie au transistor de ligne de mots pour des opérations d'écriture. Une seconde tension inférieure à la première tension, peut être fournie au transistor de ligne de mots pendant les opérations de lecture.

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