Write operation for spin transfer torque magnetoresistive...

Details Write operation for spin transfer torque magnetoresistive... Write operation for spin transfer torque magnetoresistive...

G - Physics

11

C

G11C 11/16 (2006.01)

Patent

CA 2726471

Systems, circuits and methods for controlling write operations in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A reduced bit cell size is achieved by arranging the source lines (SL) substantially in parallel with the word lines (WL) and substantially perpendicular to the bit lines (BL). Further, in one embodiment during a write operation, a high logic / voltage level is applied to the bit lines of unselected bit cells to prevent an invalid write operation.

Linvention concerne des systèmes, des circuits et des procédés de commande dopérations d'écriture dans une mémoire vive magnétorésistive à couple de transfert de spin (STT-MRAM). Une taille de cellule de bit réduite est obtenue en agençant les lignes de source (SL) sensiblement parallèlement aux lignes de mot (WL) et sensiblement perpendiculairement aux lignes de bit (BL). En outre, dans un mode de réalisation, pendant une opération d'écriture, un niveau logique/de tension haut est appliqué aux lignes de bit de cellules de bit non sélectionnées pour éviter une opération d'écriture non valide.

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