G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 16/02 (2006.01) B41J 2/175 (2006.01) G06F 3/12 (2006.01) G06F 12/14 (2006.01)
Patent
CA 2616359
In a semiconductor storage device (10), when the front address of a write inhibition area is exceeded, a passage flag is turned on. When the semiconductor storage device (10) receives a request of data write to a write restriction area (WRA), it is determined whether the passage flag has been turned on. If the passage flag has not been turned on, the data write to the write restriction area is executed. Otherwise, the data write to the write restriction area is not executed.
Dans un dispositif de stockage semi-conducteur (10), lorsque l~adresse avant d~une zone d~inhibition d~écriture est dépassée, un drapeau de passage est activé. Lorsque le dispositif de stockage semi-conducteur (10) reçoit une requête d~écriture de données dans une zone de restriction d~écriture (WRA), on détermine si le drapeau de passage est activé ou non. Si le drapeau de passage n~est pas activé, l~écriture de données dans la zone de restriction d~écriture est exécutée. Sinon, l~écriture de données dans la zone de restriction d~écriture n~est pas exécutée.
Riches Mckenzie & Herbert Llp
Seiko Epson Corporation
LandOfFree
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