G - Physics – 01 – T
Patent
G - Physics
01
T
G01T 1/16 (2006.01) G01N 23/083 (2006.01) G01T 1/24 (2006.01) G01T 7/00 (2006.01) H01L 27/146 (2006.01)
Patent
CA 2342648
It is an object of the invention to improve the quality of images obtained by an X-ray detector. A charge transport layer 13 mainly consisted of diantimony trisulfide, an X-ray detection layer 14 mainly consisted of amorphous selenium and a second electrode film 15 are formed in the same order on the surface of a first electrode film 12 provided on a substrate 11. A voltage whose polarity is positive at the first electrode film 12 and negative at the second electrode film 15 is applied, and the surface of the second electrode film 15 is irradiated with an X-ray. Then, carriers generated in the X-ray detection layer 14 are collected by the first and second electrode films . Since a diode whose anode is an X-ray detection layer 14 side and whose cathode is a charge transport layer 13 side is formed at the interface between the X-ray detection layer 14 and charge transport layer 13 of the X-ray detector 31, no hole is injected from the first electrode film 12 into the X-ray detection layer 14, which prevents any reduction of image quality.
Kishimoto Hidetoshi
Sato Kenji
Sato Masahito
Shima Kazuhiko
Shimura Yoichiro
Gowling Lafleur Henderson Llp
Shimadzu Corporation
Shindengen Electric Manufacturing Co. Ltd.
Shindengen Sensor Device Co. Ltd.
Yamanashi Electronics Co. Ltd.
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