X-ray lithography apparatus and method of use

H - Electricity – 05 – G

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358/11

H05G 1/00 (2006.01) G03F 7/20 (2006.01) H01J 35/02 (2006.01)

Patent

CA 1118914

X-RAY LITHOGRAPHY APPARATUS AND METHOD OF USE ABSTRACT OF THE DISCLOSURE In order to obtain shorter exposure time and to obtain a longer life in x-ray lithography apparatus, an x-ray target made of tungsten is utilized and the apparatus operated to gen- erate the tungsten M-line, this line being at a wavelength which will be absorbed by the resist normally used in lithography. To develop the resist, which was initially designed for use in an electron beam lithography, a developing method is used in which a initial short development with a high concentration is first carried out followed by a longer, full development with a concen- tration which is approximately the lowest at which complete development will take place.

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