X-ray lithography at 100 d linewidths using x-ray masks...

Details X-ray lithography at 100 d linewidths using x-ray masks... X-ray lithography at 100 d linewidths using x-ray masks...

B - Operations, Transporting

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B41M 1/06 (2006.01) B41M 5/00 (2006.01) G03F 1/14 (2006.01)

Patent

CA 1143483

X-RAY LITHOGRAPHY AT ~ 100 .ANG. LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES Abstract of the Disclosure A method for producing X-ray masks with precisely controlled linewidths. The method comprises forming a relief structure with a predetermined cross-section. An X-ray absorber material is deposited at an oblique angle onto the relief struc- ture.

352940

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