X-ray mask substrate and method of fabrication thereof

Details X-ray mask substrate and method of fabrication thereof X-ray mask substrate and method of fabrication thereof

G - Physics

21

F

204/96.34, 95/94

G21F 3/00 (2006.01) C23C 14/04 (2006.01) C23C 16/28 (2006.01) G03F 1/14 (2006.01)

Patent

CA 1191477

X-RAY MASK SUBSTRATE AND METHOD OF FABRICATION THEREOF ABSTRACT An improved X-ray lithography mask has been fabricated by forming an X ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375°C. The hydrogen con- centration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.

426785

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