X-y infrared ccd sensor and method for making same

Details X-y infrared ccd sensor and method for making same X-y infrared ccd sensor and method for making same

H - Electricity

01

L

345/14, 356/197

H01L 31/08 (2006.01) H01L 27/146 (2006.01) H01L 27/148 (2006.01)

Patent

CA 1158349

ABSTRACT OF THE DISCLOSURE An x-y infrared CCD sensor employing the photoelectric effect as in a p-doped semiconductor substrate of silicon with an n+pn diode as the infra- red sensor element with a three layer structure in the vertical direction in the semiconductor substrate and a n-channel charge coupled device shift register. The device has a metal-oxide-semiconductor storage electrode directly adjacent to the n-region of the three layer structure. The device is manufactured by masked ion implantation with the doping density for the three layer sequence such that the doping density for the layer operating as the emitter is greater than the doping density for the layer operating as a base, which in turn is greater than the doping density for the layer operating as the collector.

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