H - Electricity – 01 – P
Patent
H - Electricity
01
P
317/26, 333/46,
H01P 1/218 (2006.01) H01F 10/24 (2006.01)
Patent
CA 1266100
ABSTRACT Disclosed is a YIG thin film device utilizing ferrimagnetic resonance effect, a magnetic circuit having a gap of length ?g where the YIG thin film device being provided and applying a bias magnetic field perpendicular to a film surface of the YIG thin film device, the magnetic circuit including a permanent magnet having a thickness ?m and a soft magnetic plate having a thickness ?x,the permanent magnet satisfying the characteristics 4.pi.Mso < (fo/.gamma.) NzY4 .pi. MsoY Image the soft magnetic plate satisfying the characteristics 4.pi.Mso < (fo/.gamma.) NzY4.pi.MsoY Image wherein fo is resonance frequency of the YIG thin film device, .gamma. is gyromagnetic ratio of the YIG thin film NzY is demagnetization factor of the YIG thin film ? 4.pi.MsoY is saturation magnetization of the YIG thin film at room temperature, 4.pi.MsoX is saturation magnetization of the soft magnetic plate, Br° is remanence of the permanent magnet at room temperature, .alpha.1B is first order temperature coefficient of the remanence of the permanent magnet near room temperature, .alpha.1Y is first order temperature coefficient of the saturation magnetization of the YIG thin film near room temperature, .alpha.1x is first order temperature coefficient of the saturation magnetization of the soft magnetic plate near room temperature and, the thickness ?m and ?x being selected to improve temperature dependency of the resonance frequency. - 44 -
513289
Ito Seigo
Miyake Masami
Murakami Yoshikazu
Tamada Hitoshi
Tanaka Hideo
Gowling Lafleur Henderson Llp
Sony Corporation
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