G - Physics – 11 – C
Patent
G - Physics
11
C
356/123, 356/178
G11C 11/14 (2006.01) B44C 1/00 (2006.01) H01F 41/34 (2006.01) H01P 11/00 (2006.01)
Patent
CA 1078971
ABSTRACT OF THE INVENTION A process is disclosed for fabricating narrow line- width yttrium iron garnet (YIG) disks suitable for microwave appli- cations. The process comprises forming an epitaxial thin film of yttrium iron garnet, containing from about 0.5 to 1.5 atom percent trivalent lanthanum ions on the dodecahedral sites, on a substrate such as gadolinium gallium garnet (GGG), forming a thin layer of SiO2 on the YIG film, forming a photoresist mask layer on the SiO2 layer, removing portions of the photoresist mask layer to expose portions of the underlying SiO2 layer, removing portions of the SiO2 layer to expose portions of the underlying YIG layer and removing the exposed portions of the YIG layers to form isolated La:YIG disks supported on the GGG substrate. The substrate is then further processed, as by dicing, to provide individual La:YIG disks for fabrication into microwave devices. Linewidths of about 0.45 Oe are obtained by the process.
285561
Nemiroff Michael
Schevey William R.
Yue Hong J.
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