H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/00 (2006.01) C23C 14/08 (2006.01) C30B 23/02 (2006.01) H01L 21/22 (2006.01) H01L 21/225 (2006.01) H01L 21/363 (2006.01) H01L 31/0296 (2006.01) H01L 31/18 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2338846
A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
La présente invention, qui concerne un film d'oxyde de zync dopé P, concerne également un procédé permettant d'élaborer le film ainsi que des jonctions p-n ou n-p. Selon une réalisation préférée, le film d'oxyde de zinc dopé P, qui contient de l'arsenic, résulte d'une pousse sur un substrat d'arséniure de gallium. Ce film d'oxyde de zinc dopé P présente une concentration nette d'accepteurs d'au moins environ 10?15¿ accepteurs/cm?3¿, une résistivité n'excédant pas environ 1 .OMEGA.-cm, et une mobilité Hall se situant entre environ 0,1 cm?2¿/Vs et environ 50 cm?2¿/Vs.
Ryu Yungryel
White Henry W.
Zhu Shen
Smart & Biggar
The Curators Of The University Of Missouri
LandOfFree
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