Zirconium complex used for the cvd method and preparation...

Details Zirconium complex used for the cvd method and preparation... Zirconium complex used for the cvd method and preparation...

C - Chemistry, Metallurgy

23

C

C23C 16/18 (2006.01) C23C 16/06 (2006.01) C23C 16/40 (2006.01)

Patent

CA 2491886

In the preparation of a PZT thin film by the liquid source CVD method, using zirconium tetrakis(isobutyrylpivaloylmethanate) as a zirconium precursor enables to obtain a constant composition ratio of films within a wide range of the substrate temperature, and negates the need for the thermal treatment alter the film preparation. Accordingly, the present invention provides a PZT thin film having a constant quality at a low cost.

L'invention concerne la préparation d'un film mince PZT par un procédé CVD à source liquide, consistant à utiliser du tétrakis(isobutyrylpivaloylméthanate) de zirconium comme précuseur du zirconium afin d'obtenir un rapport de composition constant des films dans une large gamme de températures du substrat, ne rendant plus nécessaire le traitement thermique après la préparation du film. La présente invention permet ainsi d'obtenir un film mince PZT de qualité constante à un coût réduit.

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