Zone infiltration method of forming a silicon carbide body

C - Chemistry – Metallurgy – 04 – B

Patent

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C04B 35/56 (2006.01) C04B 35/65 (2006.01)

Patent

CA 2089277

RD-21,824 Abstract of the Disclosure A method for infiltrating a porous carbonaceous preform with a silicon or silicon alloy infiltrant to form a silicon carbide body is disclosed. An assembly is formed of the preform and an infiltration means for bringing the infiltrant into contact with the preform at least along a traversing dimension of the preform. A zone in the assembly is heated in an inert atmosphere or partial vacuum to an infiltration temperature that provides for wicking of the infiltrant into a section of the preform in the zone. The heating zone traverses the assembly along the traversing dimension. A silicon carbide body is formed from reaction of the infiltrant with the preform.

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