Zone melt recrystallization method and apparatus

C - Chemistry – Metallurgy – 30 – B

Patent

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356/197, 327/4,

C30B 13/30 (2006.01) C30B 13/16 (2006.01) C30B 13/28 (2006.01) C30B 13/32 (2006.01) H01L 21/02 (2006.01)

Patent

CA 1333466

The improved zone-melt recrystallizationg apparatus is comprised of a heating element having a plurality of individually controllable heating elements. The elements are heated in sequence to generate a melted zone within a semiconductor material which is translated across the material by heating then cooling adjacent heating elements to recrystallize the material.

582966

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